The Candela CS20 wafer inspection system simultaneously measures surface reflectivity and topography for automatic defect detection and classification
High-Power RF Devices
Detection and classification of critical GaAs defects - from epi defects such as pits, rings, and bullseyes to substrate level defects including crystal slip and polishing stains.
Shipping from United States (Available: now + 3 weeks lead time ARO). Seller warranty is As is.
- SOLD: Application- Jp Miz
- High Brightness Light Emitting Diodes (HBLEDs)
- The platform is designed for defect detection and inspection of transparent materials such as sapphire and GaN and can detect a wide variety of yield impacting defects such as substrate scratches and stains, epi-layer pits, crosshatch, crystal cracking, topographic anomalies and epi-layer uniformity.
- High-Power RF Devices
- Detection and classification of critical GaAs defects - from epi defects such as pits, rings, and bullseyes to substrate level defects including crystal slip and polishing stains. Extremely sensitive to GaAs substrate stains, many of which can go undetected under microscope or bright light inspection. Various stains have been identified as killer defects resulting in poor epi adhesion and rough epi morphology.
- Coated Glass (CMOS imagers, LCoS chips, etc.)
- Increasingly demanding specifications for specialty coatings on glass (Conductive ITO, Anti-Reflective, Polyimide, etc.) push visual inspection methods to their limit. High volume production of devices such as CMOS imagers and LCoS displays require a quantifiable, automated wafer inspection and metrology capability with 100% surface inspection capability to control yield. The manual or semi-automated visual inspection techniques in use today cannot meet these needs, and conventional defect detection tools (optical microscope, ellipsometer, profiler, etc.) do not provide required for optimize yeild.